Your browser doesn't support javascript.
loading
Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.
Alanis, Juan Arturo; Saxena, Dhruv; Mokkapati, Sudha; Jiang, Nian; Peng, Kun; Tang, Xiaoyan; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick.
Afiliación
  • Alanis JA; School of Physics and Astronomy and the Photon Science Institute, The University of Manchester , Manchester M13 9PL, U.K.
  • Saxena D; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Mokkapati S; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Jiang N; School of Physics and Astronomy and the Institute for Compound Semiconductors, Cardiff University , Cardiff CF10 3XQ, U.K.
  • Peng K; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Tang X; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Fu L; School of Physics and Astronomy and the Photon Science Institute, The University of Manchester , Manchester M13 9PL, U.K.
  • Tan HH; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Jagadish C; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
  • Parkinson P; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
Nano Lett ; 17(8): 4860-4865, 2017 08 09.
Article en En | MEDLINE | ID: mdl-28732157
Single nanowire lasers based on bottom-up III-V materials have been shown to exhibit room-temperature near-infrared lasing, making them highly promising for use as nanoscale, silicon-integrable, and coherent light sources. While lasing behavior is reproducible, small variations in growth conditions across a substrate arising from the use of bottom-up growth techniques can introduce interwire disorder, either through geometric or material inhomogeneity. Nanolasers critically depend on both high material quality and tight dimensional tolerances, and as such, lasing threshold is both sensitive to and a sensitive probe of such inhomogeneity. We present an all-optical characterization technique coupled to statistical analysis to correlate geometrical and material parameters with lasing threshold. For these multiple-quantum-well nanolasers, it is found that low threshold is closely linked to longer lasing wavelength caused by losses in the core, providing a route to optimized future low-threshold devices. A best-in-group room temperature lasing threshold of ∼43 µJ cm-2 under pulsed excitation was found, and overall device yields in excess of 50% are measured, demonstrating a promising future for the nanolaser architecture.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article Pais de publicación: Estados Unidos