Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures.
Nanotechnology
; 28(38): 385301, 2017 Sep 20.
Article
en En
| MEDLINE
| ID: mdl-28699622
Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2017
Tipo del documento:
Article
País de afiliación:
Japón
Pais de publicación:
Reino Unido