Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A.

Afiliación

Hristu R; Center for Microscopy-Microanalysis and Information Processing, University Politehnica of Bucharest, 313 Splaiul Independentei, 060042, Bucharest, Romania.
Stanciu SG; Center for Microscopy-Microanalysis and Information Processing, University Politehnica of Bucharest, 313 Splaiul Independentei, 060042, Bucharest, Romania.
Tranca DE; Center for Microscopy-Microanalysis and Information Processing, University Politehnica of Bucharest, 313 Splaiul Independentei, 060042, Bucharest, Romania.
Polychroniadis EK; Physics Department, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece.
Stanciu GA; Center for Microscopy-Microanalysis and Information Processing, University Politehnica of Bucharest, 313 Splaiul Independentei, 060042, Bucharest, Romania. stanciu@physics.pub.ro.

Sci Rep ; 7(1): 4870, 2017 07 07.

Article en En | MEDLINE | ID: mdl-28687789

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Diagnostic_studies Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: Rumanía Pais de publicación: Reino Unido

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