Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires.

Boland, Jessica L; Tütüncüoglu, Gözde; Gong, Juliane Q; Conesa-Boj, Sonia; Davies, Christopher L; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

Boland, Jessica L; Tütüncüoglu, Gözde; Gong, Juliane Q; Conesa-Boj, Sonia; Davies, Christopher L; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B.

Afiliación

Boland JL; Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK. michael.johnston@physics.ox.ac.uk.
Tütüncüoglu G; Laboratory of Semiconductor Materials, École polytechnique fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Gong JQ; Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK. michael.johnston@physics.ox.ac.uk.
Conesa-Boj S; Kavli Institute of Nanoscience, Delft, University of Technology Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Davies CL; Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK. michael.johnston@physics.ox.ac.uk.
Herz LM; Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK. michael.johnston@physics.ox.ac.uk.
Fontcuberta I Morral A; Laboratory of Semiconductor Materials, École polytechnique fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Johnston MB; Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK. michael.johnston@physics.ox.ac.uk.

Nanoscale ; 9(23): 7839-7846, 2017 Jun 14.

Article en En | MEDLINE | ID: mdl-28555685

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2017 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Reino Unido

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