High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties.

Park, Jozeph; Oh, Keun-Tae; Kim, Dong-Hyun; Jeong, Hyun-Jun; Park, Yun Chang; Kim, Hyun-Suk; Park, Jin-Seong

Park, Jozeph; Oh, Keun-Tae; Kim, Dong-Hyun; Jeong, Hyun-Jun; Park, Yun Chang; Kim, Hyun-Suk; Park, Jin-Seong.

Afiliación

Park J; Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology , Daejeon 305-338, Republic of Korea.
Oh KT; Department of Information Display and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea.
Kim DH; Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea.
Jeong HJ; Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea.
Park YC; National Nanofab Center, Daejeon 305-806, Republic of Korea.
Kim HS; Department of Materials Science and Engineering, Chungnam National University , Daejeon 305-764, Republic of Korea.
Park JS; Department of Information Display and Engineering, Hanyang University , 222 Wangsimni-ro, Seoul 133-719, Republic of Korea.

ACS Appl Mater Interfaces ; 9(24): 20656-20663, 2017 Jun 21.

Article en En | MEDLINE | ID: mdl-28553708

Palabras clave

Mist − CVD; atmospheric pressure; solution process; sol−gel process; tin films transistors(tfts); zinc tin oxide

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Risk_factors_studies Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article Pais de publicación: Estados Unidos

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