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Photoresponse of Natural van der Waals Heterostructures.
Ray, Kyle; Yore, Alexander E; Mou, Tong; Jha, Sauraj; Smithe, Kirby K H; Wang, Bin; Pop, Eric; Newaz, A K M.
Afiliación
  • Ray K; Department of Physics and Astronomy, San Francisco State University , San Francisco, California 94132, United States.
  • Yore AE; Department of Physics and Astronomy, San Francisco State University , San Francisco, California 94132, United States.
  • Mou T; School of Chemical, Biological and Materials Engineering, University of Oklahoma , Norman, Oklahoma 73019, United States.
  • Jha S; Department of Physics and Astronomy, San Francisco State University , San Francisco, California 94132, United States.
  • Smithe KKH; Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.
  • Wang B; School of Chemical, Biological and Materials Engineering, University of Oklahoma , Norman, Oklahoma 73019, United States.
  • Pop E; Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.
  • Newaz AKM; Department of Physics and Astronomy, San Francisco State University , San Francisco, California 94132, United States.
ACS Nano ; 11(6): 6024-6030, 2017 06 27.
Article en En | MEDLINE | ID: mdl-28485958
Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. Here we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ∼1500 nm (∼830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ∼1 ms. Our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos