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High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers.
Deutsch, Christoph; Kainz, Martin Alexander; Krall, Michael; Brandstetter, Martin; Bachmann, Dominic; Schönhuber, Sebastian; Detz, Hermann; Zederbauer, Tobias; MacFarland, Donald; Andrews, Aaron Maxwell; Schrenk, Werner; Beck, Mattias; Ohtani, Keita; Faist, Jérôme; Strasser, Gottfried; Unterrainer, Karl.
Afiliación
  • Deutsch C; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Kainz MA; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Krall M; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Brandstetter M; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Bachmann D; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Schönhuber S; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Detz H; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Zederbauer T; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • MacFarland D; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Andrews AM; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Schrenk W; Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Beck M; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Ohtani K; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Faist J; Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna, Austria.
  • Strasser G; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Unterrainer K; Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
ACS Photonics ; 4(4): 957-962, 2017 Apr 19.
Article en En | MEDLINE | ID: mdl-28470028
We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 1010 cm-2, the highest peak output power of 151 mW is found for 7.3 × 1010 cm-2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Photonics Año: 2017 Tipo del documento: Article País de afiliación: Austria Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Photonics Año: 2017 Tipo del documento: Article País de afiliación: Austria Pais de publicación: Estados Unidos