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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.
Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung.
Afiliación
  • Tzou AJ; Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan. ajtzou@narlabs.org.tw.
  • Chu KH; National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, Taiwan. ajtzou@narlabs.org.tw.
  • Lin IF; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan. ajtzou@narlabs.org.tw.
  • Østreng E; NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, Taiwan. ajtzou@narlabs.org.tw.
  • Fang YS; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Wu XP; NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Wu BW; International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Shen CH; NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Shieh JM; NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Yeh WK; NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Chang CY; National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, Taiwan.
  • Kuo HC; National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, Taiwan.
Nanoscale Res Lett ; 12(1): 315, 2017 Dec.
Article en En | MEDLINE | ID: mdl-28454481

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2017 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2017 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos