Complementary spin transistor using a quantum well channel.
Sci Rep
; 7: 46671, 2017 04 20.
Article
en En
| MEDLINE
| ID: mdl-28425459
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Sci Rep
Año:
2017
Tipo del documento:
Article
Pais de publicación:
Reino Unido