Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.

Puybaret, Renaud; Rogers, David J; Gmili, Youssef El; Sundaram, Suresh; Jordan, Matthew B; Li, Xin; Patriarche, Gilles; Teherani, Ferechteh H; Sandana, Eric V; Bove, Philippe; Voss, Paul L; McClintock, Ryan; Razeghi, Manijeh; Ferguson, Ian; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

Puybaret, Renaud; Rogers, David J; Gmili, Youssef El; Sundaram, Suresh; Jordan, Matthew B; Li, Xin; Patriarche, Gilles; Teherani, Ferechteh H; Sandana, Eric V; Bove, Philippe; Voss, Paul L; McClintock, Ryan; Razeghi, Manijeh; Ferguson, Ian; Salvestrini, Jean-Paul; Ougazzaden, Abdallah.

Afiliación

Puybaret R; Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France.

Nanotechnology ; 28(19): 195304, 2017 May 12.

Article en En | MEDLINE | ID: mdl-28358724

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2017 Tipo del documento: Article País de afiliación: Francia Pais de publicación: Reino Unido

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