Thermal Atomic Layer Etching of SiO<sub>2</sub> by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M

Thermal Atomic Layer Etching of SiO₂ by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M.

Afiliación

DuMont JW; Department of Chemistry and Biochemistry, and Department of Mechanical Engineering, University of Colorado at Boulder , Boulder, Colorado 80309, United States.
Marquardt AE; Department of Chemistry and Biochemistry, and Department of Mechanical Engineering, University of Colorado at Boulder , Boulder, Colorado 80309, United States.
Cano AM; Department of Chemistry and Biochemistry, and Department of Mechanical Engineering, University of Colorado at Boulder , Boulder, Colorado 80309, United States.
George SM; Department of Chemistry and Biochemistry, and Department of Mechanical Engineering, University of Colorado at Boulder , Boulder, Colorado 80309, United States.

ACS Appl Mater Interfaces ; 9(11): 10296-10307, 2017 Mar 22.

Article en En | MEDLINE | ID: mdl-28240864

Palabras clave

Al2O3; SiO2; aluminosilicate; atomic layer etching; hydrogen fluoride; trimethylaluminum

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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