Your browser doesn't support javascript.
loading
Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks.
Schulte-Braucks, C; Narimani, K; Glass, S; von den Driesch, N; Hartmann, J M; Ikonic, Z; Afanas'ev, V V; Zhao, Q T; Mantl, S; Buca, D.
Afiliación
  • Schulte-Braucks C; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
  • Narimani K; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
  • Glass S; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
  • von den Driesch N; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
  • Hartmann JM; Université Grenoble Alpes , 38000 Grenoble, France.
  • Ikonic Z; CEA , LETI, Minatec Campus, 38054 Grenoble, France.
  • Afanas'ev VV; Institute of Microwaves and Photonics, Schools of Electronic and Electrical Engineering, University of Leeds , Leeds L2 9JT, United Kingdom.
  • Zhao QT; Semiconductor Physics Laboratory, KU Leuven , 3001 Leuven, Belgium.
  • Mantl S; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
  • Buca D; Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany.
ACS Appl Mater Interfaces ; 9(10): 9102-9109, 2017 Mar 15.
Article en En | MEDLINE | ID: mdl-28221764
The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at. % and Si-contents from 0 to 10 at. % particularly focusing on the minority carrier inversion response. A clear correlation between the Sn-induced shrinkage of the bandgap energy and enhanced minority carrier response was confirmed using temperature and frequency dependent capacitance voltage-measurements, in good agreement with k.p theory predictions and photoluminescence measurements of the analyzed epilayers as reported earlier. The enhanced minority generation rate for higher Sn-contents can be firmly linked to the bandgap reduction in the GeSn epilayer without significant influence of substrate/interface effects. It thus offers a unique possibility to analyze intrinsic defects in (Si)GeSn epilayers. The extracted dominant defect level for minority carrier inversion lies approximately 0.4 eV above the valence band edge in the studied Sn-content range (0-12.5 at. %). This finding is of critical importance since it shows that the presence of Sn by itself does not impair the minority carrier lifetime. Therefore, the continuous improvement of (Si)GeSn material quality should yield longer nonradiative recombination times which are required for the fabrication of efficient light detectors and to obtain room temperature lasing action.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos