Atomic Defects and Doping of Monolayer NbSe<sub>2</sub>.

Nguyen, Lan; Komsa, Hannu-Pekka; Khestanova, Ekaterina; Kashtiban, Reza J; Peters, Jonathan J P; Lawlor, Sean; Sanchez, Ana M; Sloan, Jeremy; Gorbachev, Roman V; Grigorieva, Irina V; Krasheninnikov, Arkady V; Haigh, Sarah J

Atomic Defects and Doping of Monolayer NbSe₂.

Nguyen, Lan; Komsa, Hannu-Pekka; Khestanova, Ekaterina; Kashtiban, Reza J; Peters, Jonathan J P; Lawlor, Sean; Sanchez, Ana M; Sloan, Jeremy; Gorbachev, Roman V; Grigorieva, Irina V; Krasheninnikov, Arkady V; Haigh, Sarah J.

Afiliación

Kashtiban RJ; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Peters JJ; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Sanchez AM; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Sloan J; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Krasheninnikov AV; Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf , 01328 Dresden, Germany.
Haigh SJ; National University of Science and Technology MISiS , Leninskiy Prospekt, Moscow, 119049, Russian Federation.

ACS Nano ; 11(3): 2894-2904, 2017 03 28.

Article en En | MEDLINE | ID: mdl-28195699

Palabras clave

Pt doping; air-sensitive 2D crystals; atomic resolution TEM; defect dynamics; graphene encapsulation; monolayer NbSe2; transition metal dichalcogenides

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2017 Tipo del documento: Article Pais de publicación: Estados Unidos

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