Designing Strained Interface Heterostructures for Memristive Devices.

Schweiger, Sebastian; Pfenninger, Reto; Bowman, William J; Aschauer, Ulrich; Rupp, Jennifer L M

Schweiger, Sebastian; Pfenninger, Reto; Bowman, William J; Aschauer, Ulrich; Rupp, Jennifer L M.

Afiliación

Schweiger S; Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.
Pfenninger R; Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.
Bowman WJ; Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.
Aschauer U; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
Rupp JL; Laboratory for Electrochemical Interfaces, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Adv Mater ; 29(15)2017 Apr.

Article en En | MEDLINE | ID: mdl-28195367

Palabras clave

interfaces; lattice strain; raman; resistive switching

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2017 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Alemania

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