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A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.
Hwang, Hyeon Jun; Chang, Kyoung Eun; Yoo, Won Beom; Shim, Chang Hoo; Lee, Sang Kyung; Yang, Jin Ho; Kim, So-Young; Lee, Yongsu; Cho, Chunhum; Lee, Byoung Hun.
Afiliación
  • Hwang HJ; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Chang KE; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Yoo WB; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Shim CH; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Lee SK; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Yang JH; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Kim SY; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Lee Y; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
  • Cho C; Center for Emerging Electric Devices and Systems, Departmant of Nanobio Materials and Electronics, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea.
  • Lee BH; Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr and Center for Emerging Electric Devices and Systems, Departmant of Nanobio Materials and Electron
Nanoscale ; 9(7): 2442-2448, 2017 Feb 16.
Article en En | MEDLINE | ID: mdl-28165105
We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 107 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2017 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2017 Tipo del documento: Article Pais de publicación: Reino Unido