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High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics.
Zhao, Baodan; Abdi-Jalebi, Mojtaba; Tabachnyk, Maxim; Glass, Hugh; Kamboj, Varun S; Nie, Wanyi; Pearson, Andrew J; Puttisong, Yuttapoom; Gödel, Karl C; Beere, Harvey E; Ritchie, David A; Mohite, Aditya D; Dutton, Siân E; Friend, Richard H; Sadhanala, Aditya.
Afiliación
  • Zhao B; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Abdi-Jalebi M; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Tabachnyk M; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Glass H; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Kamboj VS; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Nie W; Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
  • Pearson AJ; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Puttisong Y; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Gödel KC; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Beere HE; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Ritchie DA; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Mohite AD; Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
  • Dutton SE; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Friend RH; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
  • Sadhanala A; Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
Adv Mater ; 29(2)2017 Jan.
Article en En | MEDLINE | ID: mdl-28066989
Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V-1 s-1 ) intrinsic carrier mobilities.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2017 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2017 Tipo del documento: Article Pais de publicación: Alemania