Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.

Al Saqri, Noor Alhuda; Felix, Jorlandio F; Aziz, Mohsin; Kunets, Vasyl P; Jameel, Dler; Taylor, David; Henini, Mohamed; Abd El-Sadek, Mahmmoud S; Furrow, Colin; Ware, Morgan E; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

Al Saqri, Noor Alhuda; Felix, Jorlandio F; Aziz, Mohsin; Kunets, Vasyl P; Jameel, Dler; Taylor, David; Henini, Mohamed; Abd El-Sadek, Mahmmoud S; Furrow, Colin; Ware, Morgan E; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory.

Afiliación

Al Saqri NA; School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK. Department of Physics, College of Science, Box 36, Sultan Qaboos University, Al Khoud 123, Oman.

Nanotechnology ; 28(4): 045707, 2017 Jan 27.

Article en En | MEDLINE | ID: mdl-27997370

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2017 Tipo del documento: Article País de afiliación: Omán Pais de publicación: Reino Unido

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