The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction.

Kim, Sun-Woo; Kim, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong

Kim, Sun-Woo; Kim, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong.

Afiliación

Kim SW; Department of Nano Semiconductor Engineering, Korea University , Seoul 136-701, Korea.
Kim SH; School of Electrical Engineering, Korea University , Seoul 136-701, Korea.
Kim GS; School of Electrical Engineering, Korea University , Seoul 136-701, Korea.
Choi C; Division of Materials Science and Engineering, Hanyang University , Seoul 133-791, Korea.
Choi R; Material Science and Engineering, Inha University , Incheon 402-751, Korea.
Yu HY; Department of Nano Semiconductor Engineering, Korea University , Seoul 136-701, Korea.

ACS Appl Mater Interfaces ; 8(51): 35614-35620, 2016 Dec 28.

Article en En | MEDLINE | ID: mdl-27966860

Palabras clave

Fermi level pinning; Schottky barrier; gallium arsenide; interfacial dipole; specific contact resistivity

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article Pais de publicación: Estados Unidos

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