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Electric-Field Switchable Second-Harmonic Generation in Bilayer MoS2 by Inversion Symmetry Breaking.
Klein, J; Wierzbowski, J; Steinhoff, A; Florian, M; Rösner, M; Heimbach, F; Müller, K; Jahnke, F; Wehling, T O; Finley, J J; Kaniber, M.
Afiliación
  • Klein J; Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, 85748 Garching, Germany.
  • Wierzbowski J; Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, 85748 Garching, Germany.
  • Steinhoff A; Institut für Theoretische Physik, Universität Bremen , P.O. Box 330 440, 28334 Bremen, Germany.
  • Florian M; Institut für Theoretische Physik, Universität Bremen , P.O. Box 330 440, 28334 Bremen, Germany.
  • Rösner M; Institut für Theoretische Physik, Universität Bremen , P.O. Box 330 440, 28334 Bremen, Germany.
  • Heimbach F; Bremen Center for Computational Materials Science, Universität Bremen , 28334 Bremen, Germany.
  • Müller K; Lehrstuhl für Physik funktionaler Schichtsysteme, Physik Department E10, Technische Universität München , James-Franck-Straße 1, 85748 Garching, Germany.
  • Jahnke F; Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, 85748 Garching, Germany.
  • Wehling TO; Institut für Theoretische Physik, Universität Bremen , P.O. Box 330 440, 28334 Bremen, Germany.
  • Finley JJ; Institut für Theoretische Physik, Universität Bremen , P.O. Box 330 440, 28334 Bremen, Germany.
  • Kaniber M; Bremen Center for Computational Materials Science, Universität Bremen , 28334 Bremen, Germany.
Nano Lett ; 17(1): 392-398, 2017 01 11.
Article en En | MEDLINE | ID: mdl-27959565
We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS2 embedded into microcapacitor devices. By applying strong external electric field perturbations (|F| = ±2.6 MV cm-1) perpendicular to the basal plane of the crystal, we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range (Eω ∼ 1.25-1.47 eV) probed by measuring the second-harmonic response at E2ω, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at E2ω = 2.49 eV, energetically detuned by ΔE = E2ω - EC = -0.26 eV from the C-resonance (EC = 2.75 eV). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with density functional theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos