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Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing.
Park, Dong-Wook; Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C; Ma, Zhenqiang.
Afiliación
  • Park DW; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Kim H; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Bong J; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Mikael S; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Kim TJ; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Williams JC; Department of Biomedical Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
  • Ma Z; Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, USA.
Appl Phys Lett ; 109(15): 152105, 2016 10 10.
Article en En | MEDLINE | ID: mdl-27795570
Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 µS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Appl Phys Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Appl Phys Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos