Working Memory Load and Reminder Effect on Event-Based Prospective Memory of High- and Low-Achieving Students in Math.

Chen, Youzhen; Lian, Rong; Yang, Lixian; Liu, Jianrong; Meng, Yingfang

Chen, Youzhen; Lian, Rong; Yang, Lixian; Liu, Jianrong; Meng, Yingfang.

Afiliación

Chen Y; 1 Department of Psychology, Fujian Normal University, Fuzhou, China.
Lian R; 1 Department of Psychology, Fujian Normal University, Fuzhou, China.
Yang L; 1 Department of Psychology, Fujian Normal University, Fuzhou, China.
Liu J; 1 Department of Psychology, Fujian Normal University, Fuzhou, China.
Meng Y; 1 Department of Psychology, Fujian Normal University, Fuzhou, China.

J Learn Disabil ; 50(5): 602-608, 2017.

Article en En | MEDLINE | ID: mdl-27608655

Palabras clave

event-based prospective memory; low- and high-achieving students; working memory demand

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Learn Disabil Año: 2017 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

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