A Low Temperature, Solution-Processed Poly(4-vinylphenol), YO(x) Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor.
J Nanosci Nanotechnol
; 16(3): 2632-6, 2016 Mar.
Article
en En
| MEDLINE
| ID: mdl-27455680
Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C.
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Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Silanos
/
Itrio
/
Óxido de Zinc
/
Bismuto
/
Nanopartículas
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2016
Tipo del documento:
Article
Pais de publicación:
Estados Unidos