Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays.

Wippler, David; Wilks, Regan G; Pieters, Bart E; van Albada, Sacha J; Gerlach, Dominic; Hüpkes, Jürgen; Bär, Marcus; Rau, Uwe

Wippler, David; Wilks, Regan G; Pieters, Bart E; van Albada, Sacha J; Gerlach, Dominic; Hüpkes, Jürgen; Bär, Marcus; Rau, Uwe.

Afiliación

Wilks RG; Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, D-14109 Berlin, Germany.
Pieters BE; Energy Materials In-Situ Laboratory Berlin, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Albert-Einstein-Str. 15, D-12489 Berlin, Germany.
Hüpkes J; Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, D-14109 Berlin, Germany.
Bär M; MANA/Nano-Electronics Materials Unit, National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

ACS Appl Mater Interfaces ; 8(27): 17685-93, 2016 Jul 13.

Article en En | MEDLINE | ID: mdl-27294978

Palabras clave

bulk core level position; hard X-ray photoelectron spectroscopy (HAXPES); lifetime broadening; nondestructive depth profiling; surface oxide

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article Pais de publicación: Estados Unidos

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