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Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.
Katagiri, Y; Nakamura, T; Ishii, A; Ohata, C; Hasegawa, M; Katsumoto, S; Cusati, T; Fortunelli, A; Iannaccone, G; Fiori, G; Roche, S; Haruyama, J.
Afiliación
  • Nakamura T; Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
  • Katsumoto S; Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
  • Cusati T; Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
  • Fortunelli A; CNR-ICCOM , via Giuseppe Moruzzi 1, 56124 Pisa, Italy.
  • Iannaccone G; Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
  • Fiori G; Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
  • Roche S; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, Bellaterra, 08193 Barcelona, Spain.
  • Haruyama J; ICREA, Institució Catalana de Recerca i Estudis Avançats , 08070 Barcelona, Spain.
Nano Lett ; 16(6): 3788-94, 2016 06 08.
Article en En | MEDLINE | ID: mdl-27152475
Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article Pais de publicación: Estados Unidos