Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance.

Satterthwaite, Peter F; Scheuermann, Andrew G; Hurley, Paul K; Chidsey, Christopher E D; McIntyre, Paul C

Satterthwaite, Peter F; Scheuermann, Andrew G; Hurley, Paul K; Chidsey, Christopher E D; McIntyre, Paul C.

Afiliación

Satterthwaite PF; Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
Scheuermann AG; Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
Hurley PK; Tyndall National Institute, University College Cork , Cork, Ireland.
Chidsey CE; Department of Chemistry, Stanford University , Stanford, California 94305, United States.
McIntyre PC; Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.

ACS Appl Mater Interfaces ; 8(20): 13140-9, 2016 05 25.

Article en En | MEDLINE | ID: mdl-27096845

Palabras clave

Si(100) interface; atomic layer deposition; interfacial layer; oxygen scavenging; photoelectrochemical cells; silicon dioxide; silicon photoanodes; titanium dioxide; water splitting

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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