Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride.
ACS Appl Mater Interfaces
; 8(14): 9377-83, 2016 Apr 13.
Article
en En
| MEDLINE
| ID: mdl-26986938
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2016
Tipo del documento:
Article
País de afiliación:
Alemania
Pais de publicación:
Estados Unidos