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Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling.
Liu, Fucai; Zheng, Shoujun; Chaturvedi, Apoorva; Zólyomi, Viktor; Zhou, Jiadong; Fu, Qundong; Zhu, Chao; Yu, Peng; Zeng, Qingsheng; Drummond, Neil D; Fan, Hong Jin; Kloc, Christian; Fal'ko, Vladimir I; He, Xuexia; Liu, Zheng.
Afiliación
  • Liu F; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Zheng S; Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Chaturvedi A; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Zólyomi V; National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK.
  • Zhou J; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Fu Q; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Zhu C; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Yu P; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Zeng Q; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Drummond ND; Physics Department, Lancaster University, Lancaster LA1 4YB, UK.
  • Fan HJ; Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Kloc C; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Fal'ko VI; National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK.
  • He X; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
  • Liu Z; Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg and NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological Univ
Nanoscale ; 8(11): 5826-34, 2016 Mar 21.
Article en En | MEDLINE | ID: mdl-26927684
Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm(2) V(-1) s(-1) and an on/off ratio of 10(5), together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W(-1). The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2016 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2016 Tipo del documento: Article Pais de publicación: Reino Unido