Insight into the band structure engineering of single-layer SnS2 with in-plane biaxial strain.
Phys Chem Chem Phys
; 18(11): 7860-5, 2016 Mar 21.
Article
en En
| MEDLINE
| ID: mdl-26912413
The effects of in-plane biaxial strain on the electronic structure of a photofunctional material, single-layer SnS2, were systematically investigated using hybrid density functional calculations. The bonding diagram for the band gap was firstly proposed based on the crystal orbital overlap population analysis. The conduction band-edge of single-layer SnS2 is determined by the anti-bonding interaction between Sn-5s and S-3p orbitals, while the valence band-edge comes from the anti-bonding between the neighboring S atoms. It is found that the compressive strain not only decreases the indirect band gap of single-layer SnS2, but also effectively promotes the band-edges of the conduction band to realize the overall water splitting. Besides, the dispersion of the valence band of single-layer SnS2 becomes weaker with increasing tensile strain which is beneficial for the photo-excitation through direct transitions.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Chem Chem Phys
Asunto de la revista:
BIOFISICA
/
QUIMICA
Año:
2016
Tipo del documento:
Article
Pais de publicación:
Reino Unido