Your browser doesn't support javascript.
loading
Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.
Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F.
Afiliación
  • Velasco J; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Ju L; Department of Physics, University of California , Santa Cruz, California 95064, United States.
  • Wong D; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Kahn S; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Lee J; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Tsai HZ; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Germany C; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Wickenburg S; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Lu J; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Taniguchi T; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Watanabe K; National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Zettl A; National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Wang F; Department of Physics, University of California , Berkeley, California 94720, United States.
  • Crommie MF; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Nano Lett ; 16(3): 1620-5, 2016 Mar 09.
Article en En | MEDLINE | ID: mdl-26852622
Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos