Photothermoelectric Effects in Nanoporous Silicon.

Lai, Yu-Sheng; Tsai, Chao-Yang; Chang, Chin-Kai; Huang, Cheng-Yin; Hsiao, Vincent K S; Su, Yuhlong Oliver

Lai, Yu-Sheng; Tsai, Chao-Yang; Chang, Chin-Kai; Huang, Cheng-Yin; Hsiao, Vincent K S; Su, Yuhlong Oliver.

Afiliación

Lai YS; National Nano Device Laboratories, National Applied Research Laboratories, 26, Prosperity Road I, Hsinchu, 30078, Taiwan.
Tsai CY; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
Chang CK; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
Huang CY; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
Hsiao VK; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
Su YO; Department of Applied Chemistry, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.

Adv Mater ; 28(13): 2644-8, 2016 Apr 06.

Article en En | MEDLINE | ID: mdl-26821828

RESUMEN

The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.

Palabras clave

nanoporous silicon; photothermoelectric effects; thermoelectric effects

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2016 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Alemania

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