Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices.

Kumar, Chandan; Kuiri, Manabendra; Jung, Jeil; Das, Tanmoy; Das, Anindya

Kumar, Chandan; Kuiri, Manabendra; Jung, Jeil; Das, Tanmoy; Das, Anindya.

Afiliación

Kumar C; Department of Physics, Indian Institute of Science , Bangalore 560012, India.
Kuiri M; Department of Physics, Indian Institute of Science , Bangalore 560012, India.
Jung J; Department of Physics, University of Seoul , Seoul 130-742, Korea.
Das T; Department of Physics, Indian Institute of Science , Bangalore 560012, India.
Das A; Department of Physics, Indian Institute of Science , Bangalore 560012, India.

Nano Lett ; 16(2): 1042-9, 2016 Feb 10.

Article en En | MEDLINE | ID: mdl-26765292

Palabras clave

1/f noise; Graphene; Moire pattern; band gap opening; bipolar regime; screening

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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