In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si.

Hasegawa, Mika; Sugawara, Kenta; Suto, Ryota; Sambonsuge, Shota; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, Sergey; Fukidome, Hirokazu; Suemitsu, Maki

Hasegawa, Mika; Sugawara, Kenta; Suto, Ryota; Sambonsuge, Shota; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, Sergey; Fukidome, Hirokazu; Suemitsu, Maki.

Afiliación

Hasegawa M; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan. mh7389@riec.tohoku.ac.jp.
Sugawara K; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.
Suto R; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.
Sambonsuge S; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.
Teraoka Y; JAEA, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan.
Yoshigoe A; JAEA, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan.
Filimonov S; Department of Physics, Tomsk State University, Tomsk, Russia.
Fukidome H; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.
Suemitsu M; Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.

Nanoscale Res Lett ; 10(1): 421, 2015 Dec.

Article en En | MEDLINE | ID: mdl-26501833

Palabras clave

3C-SiC; AR-XPS; Graphene; Ni carbide; Ni silicide

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2015 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Estados Unidos

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