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Selective Area Band Engineering of Graphene using Cobalt-Mediated Oxidation.
Bazylewski, Paul F; Nguyen, Van Luan; Bauer, Robert P C; Hunt, Adrian H; McDermott, Eamon J G; Leedahl, Brett D; Kukharenko, Andrey I; Cholakh, Seif O; Kurmaev, Ernst Z; Blaha, Peter; Moewes, Alexander; Lee, Young Hee; Chang, Gap Soo.
Afiliación
  • Bazylewski PF; Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada.
  • Nguyen VL; Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, Korea.
  • Bauer RP; Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada.
  • Hunt AH; Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada.
  • McDermott EJ; Institute Materials Chemistry, Vienna University of Technology, Getreidemarkt 9/165-TC, A-1060 Vienna, Austria.
  • Leedahl BD; Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada.
  • Kukharenko AI; Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620990 Yekaterinburg, Russia.
  • Cholakh SO; Ural Federal University, 19 Mira Str., 620002 Yekaterinburg, Russia.
  • Kurmaev EZ; Ural Federal University, 19 Mira Str., 620002 Yekaterinburg, Russia.
  • Blaha P; Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620990 Yekaterinburg, Russia.
  • Moewes A; Ural Federal University, 19 Mira Str., 620002 Yekaterinburg, Russia.
  • Lee YH; Institute Materials Chemistry, Vienna University of Technology, Getreidemarkt 9/165-TC, A-1060 Vienna, Austria.
  • Chang GS; Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada.
Sci Rep ; 5: 15380, 2015 Oct 21.
Article en En | MEDLINE | ID: mdl-26486966
This study reports a scalable and economical method to open a band gap in single layer graphene by deposition of cobalt metal on its surface using physical vapor deposition in high vacuum. At low cobalt thickness, clusters form at impurity sites on the graphene without etching or damaging the graphene. When exposed to oxygen at room temperature, oxygen functional groups form in proportion to the cobalt thickness that modify the graphene band structure. Cobalt/Graphene resulting from this treatment can support a band gap of 0.30 eV, while remaining largely undamaged to preserve its structural and electrical properties. A mechanism of cobalt-mediated band opening is proposed as a two-step process starting with charge transfer from metal to graphene, followed by formation of oxides where cobalt has been deposited. Contributions from the formation of both CoO and oxygen functional groups on graphene affect the electronic structure to open a band gap. This study demonstrates that cobalt-mediated oxidation is a viable method to introduce a band gap into graphene at room temperature that could be applicable in electronics applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Oxidación-Reducción / Cobalto / Grafito Idioma: En Revista: Sci Rep Año: 2015 Tipo del documento: Article País de afiliación: Canadá Pais de publicación: Reino Unido
Texto completo
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Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Oxidación-Reducción / Cobalto / Grafito Idioma: En Revista: Sci Rep Año: 2015 Tipo del documento: Article País de afiliación: Canadá Pais de publicación: Reino Unido