Microscopic basis for the band engineering of Mo1-xWxS2-based heterojunction.

Yoshida, Shoji; Kobayashi, Yu; Sakurada, Ryuji; Mori, Shohei; Miyata, Yasumitsu; Mogi, Hiroyuki; Koyama, Tomoki; Takeuchi, Osamu; Shigekawa, Hidemi

Yoshida, Shoji; Kobayashi, Yu; Sakurada, Ryuji; Mori, Shohei; Miyata, Yasumitsu; Mogi, Hiroyuki; Koyama, Tomoki; Takeuchi, Osamu; Shigekawa, Hidemi.

Afiliación

Yoshida S; Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Kobayashi Y; Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
Sakurada R; Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Mori S; Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
Miyata Y; Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
Mogi H; JST-PRESTO, Kawaguchi, 332-0012, Japan.
Koyama T; Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Takeuchi O; Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Shigekawa H; Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.

Sci Rep ; 5: 14808, 2015 Oct 07.

Article en En | MEDLINE | ID: mdl-26443124

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2015 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Reino Unido

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