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Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer.
Gu, Qian-Feng; He, Jing-Hui; Chen, Dong-Yun; Dong, Hui-Long; Li, You-Yong; Li, Hua; Xu, Qing-Feng; Lu, Jian-Mei.
Afiliación
  • Gu QF; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
  • He JH; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
  • Chen DY; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
  • Dong HL; Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China.
  • Li YY; Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China.
  • Li H; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
  • Xu QF; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
  • Lu JM; College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China.
Adv Mater ; 27(39): 5968-73, 2015 Oct 21.
Article en En | MEDLINE | ID: mdl-26316377
The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D-A1-A2-A1-D molecules that correlate with an addressable variation of memory performance from binary to ternary.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania
Texto completo
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XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania