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Activating Carrier Multiplication in PbSe Quantum Dot Solids by Infilling with Atomic Layer Deposition.
Ten Cate, Sybren; Liu, Yao; Suchand Sandeep, C S; Kinge, Sachin; Houtepen, Arjan J; Savenije, Tom J; Schins, Juleon M; Law, Matt; Siebbeles, Laurens D A.
Afiliación
  • Ten Cate S; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
  • Liu Y; ‡Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States.
  • Suchand Sandeep CS; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
  • Houtepen AJ; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
  • Savenije TJ; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
  • Schins JM; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
  • Law M; ‡Department of Chemistry, University of California, Irvine, Irvine, California 92697, United States.
  • Siebbeles LD; †Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands.
J Phys Chem Lett ; 4(11): 1766-70, 2013 Jun 06.
Article en En | MEDLINE | ID: mdl-26283107
Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2013 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2013 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Estados Unidos