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Band gap engineering of bulk and nanosheet SnO: an insight into the interlayer Sn-Sn lone pair interactions.
Zhou, Wei; Umezawa, Naoto.
Afiliación
  • Zhou W; Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China.
Phys Chem Chem Phys ; 17(27): 17816-20, 2015 Jul 21.
Article en En | MEDLINE | ID: mdl-26088037
The effects of interlayer lone-pair interactions on the electronic structure of SnO are explored using density-functional theory. Our comprehensive study reveals that the band gap of SnO opens with the increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consist of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalysts for hydrogen evolution.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article Pais de publicación: Reino Unido