Influence of post-annealing on the off current of MoS2 field-effect transistors.

Namgung, Seok Daniel; Yang, Suk; Park, Kyung; Cho, Ah-Jin; Kim, Hojoong; Kwon, Jang-Yeon

Namgung, Seok Daniel; Yang, Suk; Park, Kyung; Cho, Ah-Jin; Kim, Hojoong; Kwon, Jang-Yeon.

Afiliación

Namgung SD; School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
Yang S; School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
Park K; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
Cho AJ; School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
Kim H; School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
Kwon JY; School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.

Nanoscale Res Lett ; 10: 62, 2015.

Article en En | MEDLINE | ID: mdl-25852359

Palabras clave

Field-effect mobility; Field-effect transistors; MoS2; Molybdenum disulfide; On/off current ratio

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2015 Tipo del documento: Article Pais de publicación: Estados Unidos

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