Gate-tunable photoresponse of defective graphene: from ultraviolet to visible.
ACS Appl Mater Interfaces
; 7(4): 2171-7, 2015 Feb 04.
Article
en En
| MEDLINE
| ID: mdl-25587919
We report the gate-tunable photoresponse of a defective graphene over the ultraviolet (UV) and the visible light illumination, where the defect was generated by plasma irradiation. Plasma induced Dirac point shift indicates the p-doping effect. Interestingly the defective-graphene field effect transistor (defective-GFET) showed a negative shift upon UV illumination, whereas the device showed a positive shift under visible light illumination, along with the change in the photocurrent. The defective-GFET device showed a high photoresponsivity of 37 mA W(-1) under visible light, that is â¼3 times higher than that of the pristine graphene device. Photoinduced molecular desorption causes the UV light responsivity to 18 mA W(-1). This study shows that the tunable photodetector with high responsivity is feasible by introducing an artificial defect on graphene surface.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2015
Tipo del documento:
Article
Pais de publicación:
Estados Unidos