Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene.

Yu, Young-Jun; Kim, Keun Soo; Nam, Jungtae; Kwon, Se Ra; Byun, Hyeryoung; Lee, Kwanjae; Ryou, Jae-Hyun; Dupuis, Russell D; Kim, Jeomoh; Ahn, Gwanghyun; Ryu, Sunmin; Ryu, Mee-Yi; Kim, Jin Soo

Yu, Young-Jun; Kim, Keun Soo; Nam, Jungtae; Kwon, Se Ra; Byun, Hyeryoung; Lee, Kwanjae; Ryou, Jae-Hyun; Dupuis, Russell D; Kim, Jeomoh; Ahn, Gwanghyun; Ryu, Sunmin; Ryu, Mee-Yi; Kim, Jin Soo.

Afiliación

Yu YJ; Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI) , 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.

Nano Lett ; 15(2): 896-902, 2015 Feb 11.

Article en En | MEDLINE | ID: mdl-25562118

Palabras clave

Resonance energy transfer; free exciton; graphene; localized exciton; semiconductor quantum well; temperature dependence

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2015 Tipo del documento: Article Pais de publicación: Estados Unidos

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