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Competitive growth mechanisms of AlN on Si (111) by MOVPE.
Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan; Chen, Zhen; Wang, Lianshan; Kong, Susu; Zhao, Guijuan; Liu, Xianglin.
Afiliación
  • Feng Y; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Wei H; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Yang S; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Chen Z; LatticePower (Jiangxi) Corporation, No. 699 North Aixihu Road, National High-Tech Industrial Development Zone, Nanchang, Jiangxi, People's Republic of China, 330029.
  • Wang L; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Kong S; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zhao G; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Liu X; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
Sci Rep ; 4: 6416, 2014 Sep 18.
Article en En | MEDLINE | ID: mdl-25231628

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2014 Tipo del documento: Article Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2014 Tipo del documento: Article Pais de publicación: Reino Unido