Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions.

Mikheev, Evgeny; Hoskins, Brian D; Strukov, Dmitri B; Stemmer, Susanne

Mikheev, Evgeny; Hoskins, Brian D; Strukov, Dmitri B; Stemmer, Susanne.

Afiliación

Mikheev E; Materials Department, University of California, Santa Barbara, California 93106, USA.
Hoskins BD; 1] Materials Department, University of California, Santa Barbara, California 93106, USA [2] Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.
Strukov DB; Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.
Stemmer S; Materials Department, University of California, Santa Barbara, California 93106, USA.

Nat Commun ; 5: 3990, 2014 Jun 02.

Article en En | MEDLINE | ID: mdl-24886761

RESUMEN

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2014 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google