Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar

Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar.

Afiliación

Sridhara Rao DV; 1Defence Metallurgical Research Laboratory,DRDO,Kanchanbagh,Hyderabad 500058,India.
Sankarasubramanian R; 1Defence Metallurgical Research Laboratory,DRDO,Kanchanbagh,Hyderabad 500058,India.
Muraleedharan K; 2Defence Research and Development Organisation,DRDO Bhawan,Rajaji Marg,New Delhi 110011,India.
Mehrtens T; 3Institute of Solid State Physics,University of Bremen,Otto-Hahn-Allee 1,28359 Bremen,Germany.
Rosenauer A; 3Institute of Solid State Physics,University of Bremen,Otto-Hahn-Allee 1,28359 Bremen,Germany.
Banerjee D; 4Department of Materials Engineering,Indian Institute of Science,Bengaluru 560012,India.

Microsc Microanal ; 20(4): 1262-70, 2014 Aug.

Article en En | MEDLINE | ID: mdl-24758870

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Microsc Microanal Año: 2014 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido

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