250 nm period grating transferred by proximity i-line mask-aligner lithography.
Opt Lett
; 39(6): 1665-8, 2014 Mar 15.
Article
en En
| MEDLINE
| ID: mdl-24690864
This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Lett
Año:
2014
Tipo del documento:
Article
Pais de publicación:
Estados Unidos