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Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.
Burrows, Christopher W; Dobbie, Andrew; Myronov, Maksym; Hase, Thomas P A; Wilkins, Stuart B; Walker, Marc; Mudd, James J; Maskery, Ian; Lees, Martin R; McConville, Christopher F; Leadley, David R; Bell, Gavin R.
Afiliación
  • Burrows CW; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Dobbie A; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Myronov M; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Hase TP; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Wilkins SB; Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory , Upton, New York 11973-5000, United States.
  • Walker M; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Mudd JJ; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Maskery I; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Lees MR; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • McConville CF; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Leadley DR; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
  • Bell GR; Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
Cryst Growth Des ; 13(11): 4923-4929, 2013 Nov 06.
Article en En | MEDLINE | ID: mdl-24409091
Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Cryst Growth Des Año: 2013 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Estados Unidos
Texto completo
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Imprimir
XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Cryst Growth Des Año: 2013 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Estados Unidos