Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón.

Afiliación

López G; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Ortega PR; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Voz C; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Martín I; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Colina M; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Morales AB; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Orpella A; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.
Alcubilla R; Electronic Engineering Department, Polytechnic University of Catalonia, Jordi Girona 1-3, Mòdul C4, 08034 Barcelona, Spain.

Beilstein J Nanotechnol ; 4: 726-31, 2013.

Article en En | MEDLINE | ID: mdl-24367740

Palabras clave

aluminum oxide (Al2O3); antireflection coating; atomic layer deposition; silicon carbide (SiCx); surface passivation

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Beilstein J Nanotechnol Año: 2013 Tipo del documento: Article País de afiliación: España Pais de publicación: Alemania

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