Selective hydrothermal method to create patterned and photoelectrochemically effective Pt/WO3 interfaces.
ACS Appl Mater Interfaces
; 5(24): 13050-4, 2013 Dec 26.
Article
en En
| MEDLINE
| ID: mdl-24256114
A hydrothermal method based on the use of hydrogen peroxide is described to grow a homogeneous layer of tungsten oxide (WO3) on a platinum (Pt) film supported on a silicon wafer. WO3 growth is highly selective for Pt when present on silicon in a patterned arrangement, demonstrating that Pt catalyzes decomposition of the WO3 precursor in solution. The obtained Pt/WO3 interface yields high photocurrents of 1.1 mA/cm(2) in photoelectrochemical water splitting when illuminated by a solar simulator. The photocurrents are significantly higher than most previously reported values for hydrothermally grown layers on indium-tin oxide and fluorine-tin oxide glasses. The selective growth method thus provides new options to effectively implement WO3 in photoelectrochemical devices.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2013
Tipo del documento:
Article
País de afiliación:
Países Bajos
Pais de publicación:
Estados Unidos