Diffusion-limited current in organic metal-insulator-metal diodes.

de Bruyn, P; van Rest, A H P; Wetzelaer, G A H; de Leeuw, D M; Blom, P W M

de Bruyn, P; van Rest, A H P; Wetzelaer, G A H; de Leeuw, D M; Blom, P W M.

Afiliación

de Bruyn P; Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands and Dutch Polymer Institute, Post Office Box 902, 5600 AX Eindhoven, Netherlands.

Phys Rev Lett ; 111(18): 186801, 2013 Nov 01.

Article en En | MEDLINE | ID: mdl-24237546

RESUMEN

An analytical expression for the diffusion current in organic metal-insulator-metal diodes is derived. The derivation is based on the classical diffusion theory of Schottky, with adaptations to account for the absence of doping, a built-in voltage due to asymmetric contacts, and band bending at the Ohmic contact. The commonly observed deviation of the ideality factor from unity (~1.2) is characteristic of diffusion-limited currents in undoped organic semiconductors. Summing with the classical space-charge limited current provides a full analytic description of the current as a function of voltage, temperature and layer thickness.

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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2013 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Estados Unidos

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