Superior hydrogen storage and electrochemical properties of Mg(x)Ni(100-x)/Pd films at room temperature.
Dalton Trans
; 42(37): 13692-7, 2013 Oct 07.
Article
en En
| MEDLINE
| ID: mdl-23903091
The Mg(x)Ni(100-x) films of 100 nm have been prepared by magnetron co-sputtering Mg and Ni targets, and a Pd layer of 10 nm was deposited on these films by magnetron sputtering a Pd target. Mg2Ni and MgNi2 are directly generated during the co-sputtering process in the Mg84Ni16/Pd and Mg48Ni52/Pd films. The hydrogen storage properties of the films under 0.1 MPa H2 at 298 K were investigated. The hydrogenation of the Mg84Ni16/Pd film saturates within 45 s and exhibits the faster absorption kinetics compared with Mg94Ni6/Pd and Mg48Ni52/Pd films. The electrochemical properties of the Mg(x)Ni(100-x)/Pd films were investigated in 6 M KOH with a three-electrode cell. The Mg84Ni16/Pd film can be activated just at the first cycle. The maximum discharge capacity of the Mg84Ni16/Pd film is 482.7 mAh g(-1), the highest among these films.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Paladio
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Temperatura
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Técnicas Electroquímicas
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Hidrógeno
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Magnesio
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Níquel
Idioma:
En
Revista:
Dalton Trans
Asunto de la revista:
QUIMICA
Año:
2013
Tipo del documento:
Article
País de afiliación:
China
Pais de publicación:
Reino Unido