Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films.
Luminescence
; 28(6): 942-7, 2013.
Article
en En
| MEDLINE
| ID: mdl-23255473
ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330 °C for 32 h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575 nm) and orange (645 nm) photoluminescence.
Palabras clave
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Temperatura
/
Óxido de Zinc
Idioma:
En
Revista:
Luminescence
Asunto de la revista:
BIOFISICA
/
BIOQUIMICA
Año:
2013
Tipo del documento:
Article
País de afiliación:
Brasil
Pais de publicación:
Reino Unido